JAN2N2369A - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JAN2N2369A
Manufacturer

Microsemi
ChipWorker Part#

CW92661600
Category

BJT Transistor, BJT
Package

TO-18
Description

Trans GP BJT NPN 15V 360mW 3Pin TO-18
Documentation

Datasheet

JAN2N2369A Global Supplier

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JAN2N2369A Specifications

Attribute	Attribute Value

Part Number	JAN2N2369A
Manufacturer	Microsemi
ChipWorker Part#	CW92661600
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-18
Power Dissipation	0.36 W
Breakdown Voltage (Collector to Emitter)	15 V
hFE Min	20 @100mA, 1V
Input Power (Max)	360 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	360 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bag
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JAN2N2369A GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

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