JAN2N918 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JAN2N918
Manufacturer

Microsemi
ChipWorker Part#

CW108275333
Category

BJT Transistor, BJT
Package

TO-72-3
Description

Trans RF BJT NPN 15V 0.05A 4Pin TO-72
Documentation

Datasheet

JAN2N918 Global Supplier

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JAN2N918 Specifications

Attribute	Attribute Value

Part Number	JAN2N918
Manufacturer	Microsemi
ChipWorker Part#	CW108275333
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	4 Pin
Case/Package	TO-72-3
Power Dissipation	200 mW
Breakdown Voltage (Collector to Emitter)	15 V
hFE Min	20 @3mA, 1V
Input Power (Max)	200 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	200 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Bag
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

Your circuit will operate at higher RF frequencies with this JAN2N918 RF amplifier from Microsemi. This product"s minimum DC current gain is 10@0.5mA@10 V|20@3mA@1V|20@10mA@10V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has an operating temperature range of -65 °C to 200 °C.

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