JANTX1N6101 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTX1N6101
Manufacturer

Microsemi
ChipWorker Part#

CW113558900
Category

Diode
Package

CDIP-16
Description

JANTX Series 75V 300mA Through Hole Isolated Diode Array - DIP-16
Documentation

Datasheet

JANTX1N6101 Global Supplier

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JANTX1N6101 Specifications

Attribute	Attribute Value

Part Number	JANTX1N6101
Manufacturer	Microsemi
ChipWorker Part#	CW113558900
Category	Diode
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	16 Pin
Case/Package	CDIP-16
Forward Voltage	1 V
Power Dissipation	600 mW
Reverse recovery time	10 ns
Forward Current	300 mA
Forward Current (Max)	0.3 A
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	600 mW
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Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
Mil-Spec	Yes

Product Description

DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting.
FEATURES
• Hermetic Ceramic Package
• Isolated Diodes to Eliminate Cross-Talk Voltages
• High Breakdown Voltage VBR > 75 V at 5 µA
• Low Leakage IR< 100nA at 40 V
• Low Capacitance C < 4.0 pF
• Switching Speeds less than 10 ns
• Options for screening in accordance with MIL-PRF-19500/474 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or MSP prefixes respectively to part numbers. For example, designate MX1N6101 for a JANTX screen.

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