JANTX2N2907AUA - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTX2N2907AUA
Manufacturer

Microsemi
ChipWorker Part#

CW14624426
Category

BJT Transistor, BJT
Package

TO-18
Description

JANTX Series 0.5W(1/2W) 60V 600mA Surface Mount PNP Small Signal Silicon Transistor
Documentation

Datasheet

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JANTX2N2907AUA Specifications

Attribute	Attribute Value

Part Number	JANTX2N2907AUA
Manufacturer	Microsemi
ChipWorker Part#	CW14624426
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-18
Power Dissipation	0.5 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	100 @150mA, 10V
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Pack
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

Design various electronic circuits with this versatile PNP JANTX2N2907AUA GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

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