JANTX2N2907AUB - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTX2N2907AUB
Manufacturer

Microsemi
ChipWorker Part#

CW100021200
Category

BJT Transistor, BJT
Package

SMD-4
Description

Trans GP BJT PNP 60V 0.6A 3Pin UB
Documentation

Datasheet

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JANTX2N2907AUB Specifications

Attribute	Attribute Value

Part Number	JANTX2N2907AUB
Manufacturer	Microsemi
ChipWorker Part#	CW100021200
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SMD-4
Power Dissipation	0.5 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	100 @150mA, 10V
hFE Max	300
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Pack
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

The PNP JANTX2N2907AUB general purpose bipolar junction transistor, developed by Microsemi, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

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