JANTX2N5666 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTX2N5666
Manufacturer

Microsemi
ChipWorker Part#

CW77989767
Category

BJT Transistor, BJT
Package

TO-5
Description

Trans GP BJT NPN 200V 5A 3Pin TO-5
Documentation

Datasheet

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JANTX2N5666 Specifications

Attribute	Attribute Value

Part Number	JANTX2N5666
Manufacturer	Microsemi
ChipWorker Part#	CW77989767
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-5
Power Dissipation	1.2 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1200 mW
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Material	Silicon
Product Lifecycle Status	Active
Packaging	Bag
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
Mil-Spec	Yes

Product Description

Implement this NPN JANTX2N5666 GP BJT from Microsemi to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

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