JANTXV2N2222AUB - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTXV2N2222AUB
Manufacturer

Microsemi
ChipWorker Part#

CW91959858
Category

BJT Transistor, BJT
Package

SMD-3
Description

UB NPN 50V 0.8A
Documentation

Datasheet

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JANTXV2N2222AUB Specifications

Attribute	Attribute Value

Part Number	JANTXV2N2222AUB
Manufacturer	Microsemi
ChipWorker Part#	CW91959858
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SMD-3
Polarity	NPN
Power Dissipation	0.5 W
Input Capacitance	25 pF
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	0.8A
hFE Min	100 @150mA, 10V
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Look no further than Microsemi"s NPN JANTXV2N2222AUB general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

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