KSC5026MOS - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

KSC5026MOS
Manufacturer

ON Semiconductor
ChipWorker Part#

CW41074750
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT NPN 800V 1.5A 3Pin(3+Tab) TO-126 Bulk
Documentation

Datasheet

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KSC5026MOS Specifications

Attribute	Attribute Value

Part Number	KSC5026MOS
Manufacturer	ON Semiconductor
ChipWorker Part#	CW41074750
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	15 MHz
Number of Positions	3 Position
Power Dissipation	20 W
Breakdown Voltage (Collector to Emitter)	800 V
hFE Min	20 @100mA, 5V
Input Power (Max)	20 W
DC Current Gain (hFE)	20
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	20000 mW
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Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bag
RoHS	Compliant with Exemption
Lead-Free Status

Product Description

Bipolar (BJT) Transistor NPN 800V 1.5A 15MHz 20W Through Hole TO-126-3

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