L6387E - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

L6387E
Manufacturer

ST Microelectronics
ChipWorker Part#

CW33422163
Category

FET Driver
Package

DIP-8
Description

MOSFET DRVR 600V 0.65A 2Out Hi/Lo Side Non-Inv 8Pin PDIP Tube
Documentation

Datasheet

L6387E Global Supplier

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L6387E Specifications

Attribute	Attribute Value

Part Number	L6387E
Manufacturer	ST Microelectronics
ChipWorker Part#	CW33422163
Category	FET Driver
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	DIP-8
Frequency	0.4 MHz
Rise/Fall Time	50ns, 30ns
Number of Outputs	2 Output
Number of Positions	8 Position
Power Dissipation	0.75 W
Rise Time	50 ns
Fall Time	30 ns
Fall Time (Max)	30 ns
Fall Time (Max)	50 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-45 ℃
Power Dissipation (Max)	750 mW
Supply Voltage	17 V
Supply Voltage (Max)	17 V
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Size-Length	10.92 mm
Size-Width	6.6 mm
Size-Height	3.32 mm
Operating Temperature	-45℃ ~ 125℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Description
The L6387E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
Features
■ High voltage rail up to 600V
■ dV/dt immunity ±50V/nsec in full temperature range
■ Driver current capability:
– 400mA source,
– 650mA sink
■ Switching times 50/30 nsec rise/fall with 1nF load
■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down
■ Internal bootstrap diode
■ Outputs in phase with inputs
■ Interlocking function

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