L6391DTR - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

L6391DTR
Manufacturer

ST Microelectronics
ChipWorker Part#

CW92482275
Category

FET Driver
Package

SOIC-14
Description

MOSFET DRVR 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 14Pin SOIC T/R
Documentation

Datasheet

L6391DTR Global Supplier

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L6391DTR Specifications

Attribute	Attribute Value

Part Number	L6391DTR
Manufacturer	ST Microelectronics
ChipWorker Part#	CW92482275
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	14 Pin
Case/Package	SOIC-14
Rise/Fall Time	75ns, 35ns
Number of Outputs	2 Output
Power Dissipation	800 mW
Fall Time (Max)	70 ns
Fall Time (Max)	120 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	800 mW
Supply Voltage	12.5V ~ 20V
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Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99
HK STC License	NLR

Product Description

The L6391 is a high voltage device manufactured with the BCD™ “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.
The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing the microcontroller/DSP.
An integrated comparator is available for protections against overcurrent, overtemperature, etc.
**Key Features**
High voltage rail up to 600 V
dV/dt immunity ± 50 V/nsec in full temperature range
Driver current capability:
290 mA source
430 mA sink
Switching times 75/35 nsec rise/fall with 1 nF load
3.3 V, 5 V TTL/CMOS inputs with hysteresis
Integrated bootstrap diode
Comparator for fault protections
Smart shutdown function
Adjustable deadtime
Interlocking function
Compact and simplified layout
Bill of material reduction
Effective fault protection
Flexible, easy and fast design

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