LF356M - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LF356M
Manufacturer

TI
ChipWorker Part#

CW9291371
Category

Operational Amplifier, OP Amp IC
Package

SOIC-8
Description

TEXAS INSTRUMENTS LF356M Operational Amplifier, Single, 1 Amplifier, 5MHz, 12V/µs, 10V to 36V, SOIC, 8Pins
Documentation

Datasheet

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LF356M Specifications

Attribute	Attribute Value

Part Number	LF356M
Manufacturer	TI
ChipWorker Part#	CW9291371
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	15.0 V
Output Current	25.0 mA
Supply Current	5 mA
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	8 Position
Power Dissipation	380 mW
Common Mode Rejection Ratio	80 dB
Input Offset Drift	3.00 µV/K
Bandwidth	5 MHz
Slew Rate	12.0 V/μs
Gain Bandwidth Product	5 MHz
Input Offset Voltage	3 mV
Input Bias Current	30 pA
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
Gain Bandwidth	5 MHz
Power Dissipation (Max)	380 mW
Minimum CMRR Range	80 dB
Supply Voltage	10V ~ 36V
Supply Voltage (Max)	36 V
Supply Voltage (Min)	10 V
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.45 mm
Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LF356M is a first monolithic JFET input Operational Amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The LF356 amplifier is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
Replace expensive hybrid and module FET op-amps
Rugged JFETs allow blow-out free handling compared with MOSFET input devices
Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers
New output stage allows use of large capacitive loads (5000pF) without stability problems
Internal compensation and large differential input voltage capability
Military rated
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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