LM334M - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LM334M
Manufacturer

TI
ChipWorker Part#

CW14967926
Category

Voltage Reference
Package

SOIC-8
Description

Diode Current Reg. 400mW 8Pin SOIC Tube
Documentation

Datasheet

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LM334M Specifications

Attribute	Attribute Value

Part Number	LM334M
Manufacturer	TI
ChipWorker Part#	CW14967926
Category	Voltage Reference
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	40.0V (max)
Output Current	10 mA
Forward Voltage	40 V
Power Dissipation	400 mW
Quiescent Current	1.00 µA
Forward Current	10 mA
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
Power Dissipation (Max)	400 mW
Accuracy	±6 %
Input Voltage	1V ~ 40V
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Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The LM334M is a three terminal adjustable current source in 8 pin SOIC package. It features 10000:1 range in operating current, excellent current regulation and wide dynamic voltage range of 1V to 40V. Current is established with one external resistor and no other parts are required. Initial current accuracy is ±3%. The LM334M is a true floating current source device without a separate power supply connection. In addition reverse applied voltages of up to 20V will draw only few dozen microamperes of current allowing the devices to act as both rectifier and current source in AC applications. Typical applications for current sources include bias networks, surge protection, low power reference, ramp generation, LED driver and temperature sensing.
0.02%/V current regulation
Programmable from 1µA to 10mA
True 2 terminal operation
Forward voltage is 40V
Power dissipation is 400mW
Operating temperature range 0°C to 70°C
This device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to MOS gates.

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