LM5104M - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LM5104M
Manufacturer

TI
ChipWorker Part#

CW34760271
Category

FET Driver
Package

SOIC-8
Description

Driver 1.8A 2Out Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv 8Pin SOIC Tube
Documentation

Datasheet

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LM5104M Specifications

Attribute	Attribute Value

Part Number	LM5104M
Manufacturer	TI
ChipWorker Part#	CW34760271
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	9.00V (min)
Rise/Fall Time	600 ns
Number of Outputs	2 Output
Output Voltage	118 V
Output Current	1.8 A
Number of Positions	8 Position
Quiescent Current	400 µA
Rise Time	600 ns
Fall Time	600 ns
Fall Time (Max)	600 ns
Fall Time (Max)	600 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	9V ~ 14V
Supply Voltage (Max)	14 V
Supply Voltage (Min)	9 V
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.45 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The LM5104M is a high voltage half-bridge Gate Driver with adaptive delay, designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails.
Drives both a high-side and low-side N-channel MOSFET
Adaptive rising and falling edges with programmable
Additional delay
Single input control
25ns Typical fast turnoff propagation delay
Supply rail under-voltage lockout
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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