LM74610QDGKTQ1 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LM74610QDGKTQ1
Manufacturer

TI
ChipWorker Part#

CW2198726
Category

FET Driver
Package

VSSOP-8
Description

MOSFET DRVR 1Out Non-Inv 8Pin VSSOP T/R
Documentation

Datasheet

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LM74610QDGKTQ1 Specifications

Attribute	Attribute Value

Part Number	LM74610QDGKTQ1
Manufacturer	TI
ChipWorker Part#	CW2198726
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	VSSOP-8
Supply Voltage (DC)	100V (max)
Number of Channels	1 Channel
Number of Positions	8 Position
Quiescent Current	0.00 A
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage (Max)	45 V
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Size-Length	3 mm
Size-Width	3 mm
Size-Height	1.1 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The LM74610QDGKTQ1 is a Smart Diode Controller Device that can be used with an N-channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq. The LM74610-Q1 controller provides a gate drive for an external N-channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.
Qualified for automotive applications
AEC-Q100 qualified-Exceeds HBM ESD classification level2, device CDM ESD classification level C4B
Maximum reverse voltage of 45V
No positive voltage limitation to anode terminal
Charge pump gate driver for external N-channel MOSFET
Lower power dissipation than Schottky diode/PFET solutions
Low reverse leakage current
Zero IQ
Fast 2µs response to reverse polarity
Can be used in OR-ing applications
Meets CISPR25 EMI specification
Meets automotive ISO7637 transient
Requirements with a suitable TVS diode
No peak current limit

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