LMG1205YFXR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LMG1205YFXR
Manufacturer

TI
ChipWorker Part#

CW5644541
Package

BGA-12
Description

100V, 1.2A, 5A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA -40℃ to 125℃
Documentation

Datasheet

LMG1205YFXR Global Supplier

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LMG1205YFXR Specifications

Attribute	Attribute Value

Part Number	LMG1205YFXR
Manufacturer	TI
ChipWorker Part#	CW5644541
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	12 Pin
Case/Package	BGA-12
Rise/Fall Time	7ns, 3.5ns
Number of Outputs	2 Output
Fall Time (Max)	3.5 ns
Fall Time (Max)	7 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	4.5V ~ 5.5V
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Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status

Product Description

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.

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