LMP91000SDE - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LMP91000SDE
Manufacturer

TI
ChipWorker Part#

CW82147946
Category

Specialty Application IC
Package

LLP
Description

TEXAS INSTRUMENTS LMP91000SDE Special Function IC, Programmable Analogue Front End (AFE), 2.7V to 5.25V, LLP-14
Documentation

Datasheet

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LMP91000SDE Specifications

Attribute	Attribute Value

Part Number	LMP91000SDE
Manufacturer	TI
ChipWorker Part#	CW82147946
Category	Specialty Application IC
Documentation	Datasheet
Number of Pins	14 Pin
Case/Package	LLP
Supply Voltage (DC)	2.70V (min)
Number of Positions	14 Position
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage (Max)	5.25 V
Supply Voltage (Min)	2.7 V
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Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	Non-Compliant
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LMP91000SDE is a configurable AFE Potentiostat for low-power chemical sensing. It provides a complete signal path solution between a sensor and a microcontroller that generates an output voltage proportional to the cell current. The LMP91000 supports gas sensitivities over a range of 0.5 to 9500nA/ppm. It also allows for an easy conversion of current ranges from 5 to 750µA full scale. The potentiostat"s adjustable cell bias and trans-impedance amplifier (TIA) gain are programmable through the I²C interface. The I²C interface can also be used for sensor diagnostics. An integrated temperature sensor can be read by the user through the VOUT pin and used to provide additional signal correction in the µC or monitored to verify temperature conditions at the sensor. This potentiostat is optimized for micro-power applications and operates over a voltage range of 2.7 to 5.25V. The total current consumption can be less than 10µA.
<10µA Supply current
Up to 10mA cell conditioning current
900pA Maximum reference electrode bias current
750µA Output drive current
Complete potentiostat circuit-to-interface to most chemical cells
Programmable cell bias voltage
Low-bias voltage drift
Sink and source capability
I²C Compatible digital interface
Supported by WEBENCH® sensor AFE designer
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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