LMR64010XMFE - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LMR64010XMFE
Manufacturer

TI
ChipWorker Part#

CW196880328
Category

DC to DC Converter
Package

SOT-23
Description

NANO MODULE, 1A; Primary Input Voltage: 14V; No. of Outputs: 1; Output Voltage: 40V
Documentation

Datasheet

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LMR64010XMFE Specifications

Attribute	Attribute Value

Part Number	LMR64010XMFE
Manufacturer	TI
ChipWorker Part#	CW196880328
Category	DC to DC Converter
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SOT-23
Number of Outputs	1 Output
Output Voltage	3V ~ 40V
Output Current	1 A
Number of Positions	5 Position
Switching Frequency	1.85 MHz
Input Voltage (Max)	14 V
Input Voltage (Min)	2.7 V
Output Voltage (Max)	40 V
Output Voltage (Min)	3 V
Output Current (Max)	1 A
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
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Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	Non-Compliant
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LMR64010XMFE is a SIMPLE SWITCHER® 2.7 to 14V 1A Step-up Regulator with current-mode boost converter operating at a fixed frequency of 1.6MHz. This regulator is made possible by the minimal power loss of the internal 1A switch and use of small inductors and capacitors result in the industry"s highest power density. The 40V internal switch makes these solutions perfect for boosting to voltages of 16V or greater. This regulator has a logic-level shutdown pin that can be used to reduce quiescent current and extend battery life. Protection is provided through cycle-by-cycle current limiting and thermal shutdown. Internal compensation simplifies design and reduces component count.
Up to 1A switch current
1.6MHz Switching frequency
<1µA Low shutdown
Cycle-by-cycle current limiting
Internally compensated
Fully enabled for WEBENCH® power designer
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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- Anti-vibration foam
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