LMV7219M5 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LMV7219M5
Manufacturer

TI
ChipWorker Part#

CW12884424
Category

Comparator, Analog Comparator IC
Package

SOT-23-5
Description

TEXAS INSTRUMENTS LMV7219M5 Analog Comparator, High Speed, 1, 7ns, 2.7V to 5V, SOT-23, 5Pins
Documentation

Datasheet

LMV7219M5 Global Supplier

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LMV7219M5 Specifications

Attribute	Attribute Value

Part Number	LMV7219M5
Manufacturer	TI
ChipWorker Part#	CW12884424
Category	Comparator, Analog Comparator IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SOT-23-5
Output Current	68.0 mA
Supply Current	1.8 mA
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	5 Position
Common Mode Rejection Ratio	85 dB
Input Offset Voltage	6 mV
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 5V
Supply Voltage (Max)	5 V
Supply Voltage (Min)	2.7 V
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Size-Length	2.92 mm
Size-Width	1.6 mm
Size-Height	1.02 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LMV7219M5 is a high-speed Low-power Comparator with internal hysteresis. The LMV7219 operating voltage ranges from 2.7V to 5V with push-pull rail-to-rail output. This comparator achieves a 7ns propagation delay while consuming only 1.1mA of supply current at 5V. The comparator inputs have a common mode voltage range that extends 200mV below ground, allowing ground sensing. The internal hysteresis ensures clean output transitions even with slow-moving inputs signals.
Input common-mode voltage range extends 200mv below ground
Internal hysteresis ensures clean switching
1.3ns Fast rise and fall time
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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