LMV722M - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LMV722M
Manufacturer

TI
ChipWorker Part#

CW62396196
Category

Operational Amplifier, OP Amp IC
Package

SOIC-8
Description

TEXAS INSTRUMENTS LMV722M Operational Amplifier, Dual, 2 Amplifier, 10MHz, 5.25V/µs, 2.2V to 5.5V, SOIC, 8Pins
Documentation

Datasheet

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LMV722M Specifications

Attribute	Attribute Value

Part Number	LMV722M
Manufacturer	TI
ChipWorker Part#	CW62396196
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	5.00 V
Output Current	24.0 mA
Supply Current	2.01 mA
Number of Circuits	2 Circuit
Number of Channels	2 Channel
Number of Positions	8 Position
Common Mode Rejection Ratio	70 dB
Input Offset Drift	600 nV/K
Bandwidth	10 MHz
Slew Rate	5.25 V/μs
Gain Bandwidth Product	10 MHz
Input Offset Voltage	80 µV
Input Bias Current	260 nA
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Gain Bandwidth	10 MHz
Minimum CMRR Range	70 dB
Supply Voltage	2.2V ~ 5.5V
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Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LMV722M is a low noise low voltage Operational Amplifier has a unity gain bandwidth of 10MHz, a slew rate of 5V/µs and a quiescent current of 930µA/amplifier at 2.2V. This op-amp is designed to provide optimal performance in low voltage and low noise systems. This op-amp provides rail-to-rail output swing into heavy loads. The input common-mode voltage range includes ground and the maximum input offset voltage is 3.5mV. The capacitive load capability of the op-amp is also good at low supply voltages. The operating range is from 2.2 to 5.5V and is built with TI"s advanced Submicron Silicon-Gate BiCMOS process.
Rail-to-rail output swing
Input common-mode voltage range includes ground
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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