LMV761MF - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LMV761MF
Manufacturer

TI
ChipWorker Part#

CW18722733
Category

Comparator, Analog Comparator IC
Package

SOT-23-6
Description

TEXAS INSTRUMENTS LMV761MF Analog Comparator, Precision, 1, 120ns, 2.7V to 5V, SOT-23, 6Pins
Documentation

Datasheet

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LMV761MF Specifications

Attribute	Attribute Value

Part Number	LMV761MF
Manufacturer	TI
ChipWorker Part#	CW18722733
Category	Comparator, Analog Comparator IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-23-6
Operating Voltage	5.00V (max)
Output Current	40.0 mA
Supply Current	0.7 mA
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	6 Position
Common Mode Rejection Ratio	100 dB
Input Offset Voltage	0.2 mV
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 5V
Supply Voltage (Max)	5 V
Supply Voltage (Min)	2.7 V
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Size-Length	2.92 mm
Size-Width	1.6 mm
Size-Height	1.02 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LMV761MF is a low voltage Precision Comparator with push-pull output. This comparator is intended for applications requiring low noise and low input offset voltage. The LMV761 single has a shutdown pin that can be used to disable the device and reduce the supply current. This comparator features a CMOS input and push-pull output stage. The push-pull output stage eliminates the need for an external pull-up resistor and meets the demands of small size, low power and high performance required by portable and battery-operated electronics.
0.2mV Input offset voltage
1mV Maximum offset voltage
0.2pA Input bias current
100dB Common-mode rejection ratio
110dB PSSR
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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