LMZ21700SILT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LMZ21700SILT
Manufacturer

TI
ChipWorker Part#

CW826457
Category

DC to DC Converter
Package

SMD-8
Description

Module DC-DC 1Out 0.9V to 6V 0.65A 8Pin uSIP EP T/R
Documentation

Datasheet

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LMZ21700SILT Specifications

Attribute	Attribute Value

Part Number	LMZ21700SILT
Manufacturer	TI
ChipWorker Part#	CW826457
Category	DC to DC Converter
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SMD-8
Number of Outputs	1 Output
Output Voltage	0.9V ~ 6V
Output Current	650 mA
Number of Positions	8 Position
Number of Regulated Outputs	1 Output
Switching Frequency	2.5 MHz
Input Voltage (Max)	17 V
Input Voltage (Min)	3 V
Output Voltage (Max)	6 V
Output Voltage (Min)	900 mV
Output Current (Max)	650 mA
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Input Voltage	3V ~ 17V
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Size-Length	3.5 mm
Size-Width	3.5 mm
Size-Height	1.75 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LMZ21700SILT is a SIMPLE SWITCHER nano module with integrated inductor in 8 pin µSIP package. This nano module is an easy to use step down DC to DC solution capable of driving up to 650mA load in space constrained applications. Only an input capacitor, output capacitor, softstart capacitor and two resistors are required for basic operation.
Miniature 3.5mm x 3.5mm x 1.75mm package
Output current up to 650mA
Output voltage range from 0.9V to 6V
Input voltage range from 3V to 17V
Efficiency up to 95%
Switching frequency range from 1.25MHz to 2.5MHz
1.5µA shutdown current and 17µA quiescent current
Seamless transition to power save mode
Junction temperature range from -40°C to 125°C
Adjustable soft start function, power good and enable pins
This device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to MOS gates.

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