M29W320EB70ZE6E - Micron

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

M29W320EB70ZE6E
Manufacturer

Micron
ChipWorker Part#

CW111133233
Category

Flash Memory, Flash
Package

TFBGA-48
Description

NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8Bit/16Bit 70ns 48Pin TFBGA Tray
Documentation

Datasheet

M29W320EB70ZE6E Global Supplier

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M29W320EB70ZE6E Specifications

Attribute	Attribute Value

Part Number	M29W320EB70ZE6E
Manufacturer	Micron
ChipWorker Part#	CW111133233
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	48 Pin
Case/Package	TFBGA-48
Supply Voltage (DC)	2.70V (min)
Supply Current	10 mA
Number of Positions	48 Position
Number of Bits	8, 16 Bit
Access Time	70 ns
Memory Size	4000000 B
Access Time(Max)	70 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Size-Height	0.9 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The M29W320EB70ZE6E is a 32MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its Read mode. The M29W320E has an array of 8 parameter and 63 main blocks. M29W320EB locates the parameter blocks starting from the bottom. M29W320E has an extra 32K word (x16 mode) or 64 Kbyte (x8 mode) block, the extended block that can be accessed using a dedicated command. The extended block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone. Each block can be erased independently so it is possible to preserve valid data while old data is erased. The blocks can be protected to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command interface of the memory.
Asymmetrical block architecture
Access time - 70ns
Programming time - 10µs per byte/word typical
Double word/quadruple byte program
Unlock bypass program command - Faster production/batch programming
VPP/WP Pin for fast program and write protect
Temporary block unprotection mode
Common flash interface - 64-bit security code
Extended memory block - extra block used as security block or to store additional information
Low power consumption - standby and automatic standby
100000 Program/erase cycles per block
Electronic signature

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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