M29W400DB70N6E - Micron

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

M29W400DB70N6E
Manufacturer

Micron
ChipWorker Part#

CW66120007
Category

Flash Memory, Flash
Package

TSOP-48
Description

NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8Bit/16Bit 70ns 48Pin TSOP Tray
Documentation

Datasheet

M29W400DB70N6E Global Supplier

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M29W400DB70N6E Specifications

Attribute	Attribute Value

Part Number	M29W400DB70N6E
Manufacturer	Micron
ChipWorker Part#	CW66120007
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	48 Pin
Case/Package	TSOP-48
Supply Voltage (DC)	2.70V (min)
Supply Current	10 mA
Number of Positions	48 Position
Number of Bits	8, 16 Bit
Access Time	70 ns
Memory Size	500000 B
Access Time(Max)	70 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Size-Height	1 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The M29W400DB70N6E is a 4MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Access time - 70ns
Programming time - 10µs per byte/word typical
Program/erase controller - embedded byte/word program algorithms
Erase suspend and resume modes - read and program another block during erase suspend
Unlock bypass program command - Faster production/batch programming
Temporary block unprotection mode
Low power consumption - standby and automatic standby
100000 Program/erase cycles per block
Electronic signature

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Ordering Information

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These terms and conditions are for reference only. The actual terms and conditions are subject to the sales staff's quotation.
- Please check the technical specifications of the products when ordering.
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- Delivery will take between 1 to 2 weeks after the shipment is sent to your country.
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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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