M29W640FB70N6E - Micron

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

M29W640FB70N6E
Manufacturer

Micron
ChipWorker Part#

CW116164078
Category

Flash Memory, Flash
Package

TSOP-48
Description

MICRON M29W640FB70N6E Flash Memory, Boot Block, 64Mbit, 8M x 8Bit / 4M x 16Bit, CFI, Parallel, TSOP, 48Pins
Documentation

Datasheet

M29W640FB70N6E Global Supplier

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M29W640FB70N6E Specifications

Attribute	Attribute Value

Part Number	M29W640FB70N6E
Manufacturer	Micron
ChipWorker Part#	CW116164078
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	48 Pin
Case/Package	TSOP-48
Supply Voltage (DC)	2.70V (min)
Number of Positions	48 Position
Number of Bits	8, 16 Bit
Access Time	70 ns
Memory Size	8000000 B
Access Time(Max)	70 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The M29W640FB70N6E is a 64MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its read mode. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256Kb, to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command Interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Asynchronous random/page read
Random access - 70ns
Programming time - 10µs per byte/word typical
Program/erase controller - embedded byte/word program algorithms
Program/erase suspend and resume - read from any block during program suspend
Read and program another block during erase suspend
Unlock bypass program command - Faster production/batch programming
VPP/WP Pin for fast program and write protect
Temporary block unprotection mode
Common flash interface - 64-bit security code
Extended memory block
Extra block used as security block or to store additional information
Low power consumption - standby and automatic standby
100000 Program/erase cycles per block
Electronic signature

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Ordering Information

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- Please check the technical specifications of the products when ordering.
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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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