MAT03FH - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MAT03FH
Manufacturer

ADI
ChipWorker Part#

CW126482652
Category

BJT Transistor, BJT
Package

TO-78-6
Description

TO-78 PNP 36V 0.02A
Documentation

Datasheet

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MAT03FH Specifications

Attribute	Attribute Value

Part Number	MAT03FH
Manufacturer	ADI
ChipWorker Part#	CW126482652
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	6 Pin
Case/Package	TO-78-6
Voltage Rating (DC)	-36.0 V
Current Rating	-20.0 mA
Polarity	PNP
Gain Bandwidth Product	190 MHz
Breakdown Voltage (Collector to Emitter)	36 V
Continuous Collector Current	0.02A
Input Power (Max)	500 mW
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-55 ℃
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Size-Length	9.4 mm
Size-Width	9.4 mm
Size-Height	4.7 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	End of Life
Packaging	Rail, Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

GENERAL DESCRIPTION
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ω) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.
Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base emitter junction potential. This prevents a base-emitter break down condition which can result in degradation of gain and matching performance due to excessive breakdown current.
FEATURES
Dual Matched PNP Transistor
Low Offset Voltage: 100 mV max
Low Noise: 1 nV/√Hz @ 1 kHz max
High Gain: 100 min
High Gain Bandwidth: 190 MHz typ
Tight Gain Matching: 3% max
Excellent Logarithmic Conformance: rBE = 0.3 Ω typ
Available in Die F

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