MBRS120T3G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MBRS120T3G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4326490
Category

Schottky Diode
Package

DO-214AA
Description

Diode Schottky 20V 1A 2Pin SMB T/R
Documentation

Datasheet

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MBRS120T3G Specifications

Attribute	Attribute Value

Part Number	MBRS120T3G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4326490
Category	Schottky Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	2 Pin
Case/Package	DO-214AA
Voltage Rating (DC)	20.0 V
Current Rating	1.00 A
Halogen Free Status	Halogen Free
Output Current	≤1.00 A
Load Current	1 A
Number of Positions	2 Position
Forward Voltage	0.6 V
Polarity	Standard
Thermal Resistance	12℃/W (RθJL)
Forward Current	1 A
Max Forward Surge Current (Ifsm)	40 A
Maximum Forward Voltage (Max)	600 mV
Forward Current (Max)	1 A
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-65 ℃
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Size-Length	4.32 mm
Size-Width	3.56 mm
Size-Height	2.13 mm
Material	Silicon
Operating Temperature	-65℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MBRS120T3G is a surface-mount Schottky Power Rectifier with moulded epoxy case. This state-of-the-art device employs the use of the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification or as free-wheeling and polarity protection diodes, in surface-mount applications where compact size and weight are critical to the system.
All external surfaces corrosion-resistant
Cathode polarity band
Small compact surface mountable package with J-bend leads
Rectangular package for automated handling
Highly stable oxide passivated junction
Very low forward-voltage drop
Excellent ability to withstand reverse avalanche energy transients
Guard-ring for stress protection
AEC-Q101 qualified and PPAP capable

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