MBT3904DW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MBT3904DW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW133858
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SC-88 NPN 40V 0.2A
Documentation

Datasheet

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MBT3904DW1T1G Specifications

Attribute	Attribute Value

Part Number	MBT3904DW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW133858
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Frequency	300 MHz
Voltage Rating (DC)	40.0 V
Current Rating	200 mA
Power Rating	150 mW
Number of Positions	6 Position
Polarity	NPN
Power Dissipation	150 mW
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	0.2A
hFE Min	100 @10mA, 1V
Input Power (Max)	150 mW
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

The MBT3904DW1T1G is a dual NPN Bipolar Transistor Array housed in a surface-mount package designed for general purpose amplifier applications. By putting two discrete devices in one package, this device is ideal for low-power surface-mount applications where board space is at a premium.
100 to 300 hFE
* Simplifies circuit design
Reduces board space
Reduces component count
Halogen-free
-55 to 150°C Junction temperature range

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