MBT6429DW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MBT6429DW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8099138
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SC-88 NPN 45V 0.2A
Documentation

Datasheet

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MBT6429DW1T1G Specifications

Attribute	Attribute Value

Part Number	MBT6429DW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8099138
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Frequency	700 MHz
Voltage Rating (DC)	40.0 V
Current Rating	200 mA
Number of Positions	6 Position
Polarity	NPN
Power Dissipation	150 mW
Gain Bandwidth Product	700 MHz
Breakdown Voltage (Collector to Emitter)	45 V
Continuous Collector Current	0.2A
hFE Min	500 @100µA, 5V
Input Power (Max)	150 mW
DC Current Gain (hFE)	500
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Use this versatile NPN MBT6429DW1T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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