MC1413BDG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MC1413BDG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4575463
Category

BJT Transistor, BJT
Package

SOIC-16
Description

SOIC NPN 50V 0.5A
Documentation

Datasheet

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MC1413BDG Specifications

Attribute	Attribute Value

Part Number	MC1413BDG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4575463
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Supply Voltage (DC)	30.0 V
Current Rating	500 mA
Halogen Free Status	Halogen Free
Output Voltage	50 V
Output Current	500 mA
Number of Channels	7 Channel
Number of Positions	16 Position
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	0.5A
hFE Min	1000
DC Current Gain (hFE)	1000
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Input Voltage	30 V
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Size-Length	10 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MC1413BDG is a NPN high current Darlington Bipolar Transistor Array suitable for driving lamps, relays or printer hammers in a variety of industrial and consumer applications. It has high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500mA permit them to drive incandescent lamps. The device with a 2.7kR series input resistor is well suited for systems utilizing a 5V TTL or CMOS logic.
High voltage
-40 to 85°C Operating ambient temperature range

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