MC33151DR2G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MC33151DR2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW10918738
Category

FET Driver
Package

SOIC-8
Description

MC33151DR2G, Dual MOSFET Power Driver, 1.5A, 6.5 to 18V, Inverting, 8Pin SOIC
Documentation

Datasheet

MC33151DR2G Global Supplier

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MC33151DR2G Specifications

Attribute	Attribute Value

Part Number	MC33151DR2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW10918738
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	18.0V (max)
Operating Voltage	6.5V ~ 18V
Rise/Fall Time	31ns, 32ns
Halogen Free Status	Halogen Free
Number of Outputs	2 Output
Supply Current	10.5 mA
Number of Positions	8 Position
Power Dissipation	0.56 W
Rise Time	31 ns
Output Current (Max)	1.5 A
Fall Time	32 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	560 mW
Supply Voltage	6.5V ~ 18V
Supply Voltage (Max)	18 V
Supply Voltage (Min)	6.5 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Drive a high voltage and high current line with a transistor a certain way with this MC33151DR2G power driver manufactured by ON Semiconductor. This device has a maximum propagation delay time of 100 ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V. This gate driver has an operating temperature range of -40 °C to 85 °C.

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