MHT1008NT1 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MHT1008NT1
Manufacturer

NXP
ChipWorker Part#

CW90740800
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

RF Power Transistor,2450 to 2450MHz, 12.5W, Typ Gain in dB is 18.6 @ 2450MHz, 28V, LDMOS, SOT1811
Documentation

Datasheet

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MHT1008NT1 Specifications

Attribute	Attribute Value

Part Number	MHT1008NT1
Manufacturer	NXP
ChipWorker Part#	CW90740800
Category	BJT Transistor, BJT
Documentation	Datasheet
Number of Pins	3 Pin
Case/Package	PLD-1
Frequency	2.4GHz ~ 2.5GHz
Output Power	12.5 W
Gain	18.6 dB
Voltage Rating	28 V
Supply Voltage	28 V
	expand all
Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Overview
The MHT1008N 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.
For additional information contact NXP® Semiconductor.
MoreLess
## Features
* Characterized with series equivalent large-signal impedance parameters and common source S-parameters
* Qualified for operation at 32 Vdc
* Integrated ESD protection
* 150°C case operating temperature
* 150°C die temperature capability
* RoHS Compliant
**Typical Applications**
* Consumer cooking as PA driver
* Commercial cooking as PA driver
## Features RF Performance Tables
### Typical Performance
VDD = 28 Vdc, IDQ = 110 mA*Frequency
(MHz)* | **Signal Type** | **Gps
(dB)* | **PAE
(%)* | **Pout
(W)*
\---|---|---|---|---
2400| CW| 18.5| 57.5| 12.5
2450| 18.6| 56.3| 12.5
2500| 18.3| 55.6| 12.5
### Load Mismatch/Ruggedness
**Frequency
(MHz)* | **Signal Type** | **VSWR** | **Pin
(W)* | **Test
Voltage* | **Result**
\---|---|---|---|---|---
2450| CW| > 5:1
at all Phase Angles| 26
(3 dB Overdrive)| 32| No Device Degradation

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