MIC5020YM - Microchip

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MIC5020YM
Manufacturer

Microchip
ChipWorker Part#

CW25079689
Category

FET Driver
Package

SOIC-8
Description

Microchip MIC5020YM, MOSFET Power Driver, 11 → 50V, Non-Inverting, 8Pin SOIC
Documentation

Datasheet

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MIC5020YM Specifications

Attribute	Attribute Value

Part Number	MIC5020YM
Manufacturer	Microchip
ChipWorker Part#	CW25079689
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Frequency	0.15 MHz
Rise/Fall Time	700ns, 500ns
Number of Outputs	1 Output
Output Voltage	15.0 V
Number of Positions	8 Position
Rise Time	700 ns
Fall Time	500 ns
Fall Time (Max)	1500 ns
Fall Time (Max)	1500 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	11V ~ 50V
Supply Voltage (Max)	50 V
Supply Voltage (Min)	11 V
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Size-Length	4.93 mm
Size-Width	3.94 mm
Size-Height	1.48 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MIC5020YM is a low-side MOSFET Driver designed to operate at frequencies greater than 100kHz and is an ideal choice for high-speed applications and using IGBTs. The MIC5020 can also operate as a circuit breaker with or without automatic retry. Its maximum supply voltage lends itself to control applications using up to 50V. It can control MOSFETs that switch voltages greater than 50V. A rising or falling edge on the input results in a current source or sink pulse on the gate output. This output current pulse can turn on or off a 2000pF MOSFET in approximately 175ns. The MIC5020 then supplies a limited current, if necessary to maintain the output state. An overcurrent comparator with a trip voltage of 50mV makes the MIC5020 ideal for use with a current sensing MOSFET. An external low value resistor may be used instead of a sensing MOSFET for more precise overcurrent control. A duty cycle from 20% to about 75% is possible with an optional pull-up resistor from CT to VDD.
Overcurrent limit
Fault output indication
Gate to source protection
Compatible with current-sensing MOSFETs
175ns Rise/fall time driving 2000pF

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