MJ11012 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ11012
Manufacturer

ON Semiconductor
ChipWorker Part#

CW184444135
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

TO-204-2 NPN 60V 30A
Documentation

Datasheet

MJ11012 Global Supplier

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MJ11012 Specifications

Attribute	Attribute Value

Part Number	MJ11012
Manufacturer	ON Semiconductor
ChipWorker Part#	CW184444135
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-204-2
Polarity	NPN
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	30A
hFE Min	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	200000 mW
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Product Lifecycle Status	Unknown
Packaging	Tray
Minimum Packing Quantity	100
RoHS	RoHS Compliant

Product Description

MJ11015 (PNP)
MJ11012, MJ11016 (NPN)
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 −120 VOLTS, 200 WATTS
. . . for use as output devices in complementary general purpose amplifier applications.
•High DC Current Gain hFE= 1000 (Min) @ IC −20 Adc
•Monolithic Construction with Built−in Base Emitter Shunt Resistor
•Junction Temperature to +200C

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