MJ11015G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ11015G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW7368000
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 PNP 120V 30A
Documentation

Datasheet

MJ11015G Global Supplier

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MJ11015G Specifications

Attribute	Attribute Value

Part Number	MJ11015G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW7368000
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	-120 V
Current Rating	-30.0 A
Output Voltage	120 V
Output Current	30 A
Number of Positions	2 Position
Polarity	PNP, P-Channel
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	120 V
Continuous Collector Current	30A
hFE Min	1000 @20A, 5V
Input Power (Max)	200 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	200000 mW
Input Voltage	5 V
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.
Collector to emitter voltage (Vce) of -120V
Collector current (Ic) of -30A
Power dissipation of 200W
Operating junction temperature range from -55°C to 200°C
Collector emitter breakdown Voltage of -120V
Collector emitter saturation voltage of -3V at 20A collector current

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