MJ11022G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ11022G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4359926
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 NPN 250V 15A
Documentation

Datasheet

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MJ11022G Specifications

Attribute	Attribute Value

Part Number	MJ11022G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4359926
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	250 V
Current Rating	15.0 A
Number of Positions	2 Position
Polarity	NPN
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	15A
hFE Min	400 @10A, 5V
hFE Max	15000
Input Power (Max)	175 W
DC Current Gain (hFE)	15
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Gain Bandwidth	3MHz (Min)
Power Dissipation (Max)	175000 mW
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Size-Width	26.67 mm
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJ11021(PNP) and MJ11022 (NPN) are complementary devices.
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