MJ11028G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ11028G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW9795779
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-204 NPN 60V 50A
Documentation

Datasheet

MJ11028G Global Supplier

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MJ11028G Specifications

Attribute	Attribute Value

Part Number	MJ11028G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW9795779
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	50.0 V
Current Rating	50.0 A
Number of Positions	2 Position
Polarity	NPN
Power Dissipation	300 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	50A
hFE Min	1000 @25A, 5V
hFE Max	18000
Input Power (Max)	300 W
DC Current Gain (hFE)	18
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
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Size-Width	26.67 mm
Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

50 AMPERE COMPLEMENTARY DARLINGTON POWER TRANSISTORS 60 − 120 VOLTS 300 WATTS
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
•High DC Current Gain − hFE= 1000 (Min) @ IC= 25 Adc
hFE= 400 (Min) @ IC= 50 Adc
•Curves to 100 A (Pulsed)
•Diode Protection to Rated IC
•Monolithic Construction with Built−In Base−Emitter Shunt Resistor
•Junction Temperature to +200C
•Pb−Free Packages are Available

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