MJ15025G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ15025G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW5253729
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 PNP 250V 16A
Documentation

Datasheet

MJ15025G Global Supplier

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MJ15025G Specifications

Attribute	Attribute Value

Part Number	MJ15025G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW5253729
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Frequency	4 MHz
Voltage Rating (DC)	-250 V
Current Rating	-16.0 A
Number of Positions	2 Position
Polarity	PNP, P-Channel
Power Dissipation	250 W
Breakdown Voltage (Collector to Emitter)	250 V
Thermal Resistance	0.7℃/W (RθJC)
Continuous Collector Current	16A
hFE Min	15 @8A, 4V
hFE Max	60
Input Power (Max)	250 W
DC Current Gain (hFE)	60
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	250 W
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

The MJ15025G is a -250V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications.
High DC current gain
High safe operating area
Collector-base voltage (Vcbo = 400V)
Emitter-base voltage (Vcbo = 5V)

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