MJ21196G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ21196G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW24172900
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 NPN 250V 16A
Documentation

Datasheet

MJ21196G Global Supplier

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MJ21196G Specifications

Attribute	Attribute Value

Part Number	MJ21196G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW24172900
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Frequency	4 MHz
Voltage Rating (DC)	250 V
Current Rating	16.0 A
Polarity	NPN
Power Dissipation	250 W
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	16A
hFE Min	25 @8A, 5V
hFE Max	75
Input Power (Max)	250 W
DC Current Gain (hFE)	25
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	250000 mW
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Size-Width	26.67 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ21195 − PNP
MJ21196 − NPN
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
•Total Harmonic Distortion Characterized
•High DC Current Gain − hFE= 25 Min @ IC= 8 Adc
•Excellent Gain Linearity
•High SOA: 3 A, 80 V, 1 Sec
•Pb−Free Packages are Available

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