MJ2955 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ2955
Manufacturer

ST Microelectronics
ChipWorker Part#

CW35323103
Category

BJT Transistor, BJT
Package

TO-3
Description

Trans GP BJT PNP 60V 15A 3Pin(2+Tab) TO-3 Bag
Documentation

Datasheet

MJ2955 Global Supplier

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MJ2955 Specifications

Attribute	Attribute Value

Part Number	MJ2955
Manufacturer	ST Microelectronics
ChipWorker Part#	CW35323103
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-3
Frequency	3 MHz
Voltage Rating (DC)	-60.0 V
Current Rating	-15.0 A
Power Rating	150 W
Number of Positions	2 Position
Polarity	PNP, P-Channel
Power Dissipation	115 W
Gain Bandwidth Product	3 MHz
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	20 @4A, 4V
hFE Max	70
Input Power (Max)	115 W
DC Current Gain (hFE)	70
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	115000 mW
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Size-Length	39.5 mm
Size-Width	26.2 mm
Size-Height	8.7 mm
Material	Silicon
Operating Temperature	200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bag
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

Description
The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.
Features
■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors
Applications
■ General purpose
■ Audio Amplifier

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