MJ2955G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ2955G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1104300
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 PNP 60V 15A
Documentation

Datasheet

MJ2955G Global Supplier

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MJ2955G Specifications

Attribute	Attribute Value

Part Number	MJ2955G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1104300
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Frequency	2.5 MHz
Voltage Rating (DC)	-60.0 V
Current Rating	-15.0 A
Number of Positions	2 Position
Polarity	PNP, P-Channel
Power Dissipation	115 W
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	1.52℃/W (RθJC)
Continuous Collector Current	15A
hFE Min	20 @4A, 4V
Input Power (Max)	115 W
DC Current Gain (hFE)	2
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	115000 mW
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJ2955G is a -60V Silicon PNP Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.
Excellent safe operating area
DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)

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