MJ802G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJ802G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW7776800
Category

BJT Transistor, BJT
Package

TO-204-2
Description

TO-3 NPN 90V 30A
Documentation

Datasheet

MJ802G Global Supplier

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MJ802G Specifications

Attribute	Attribute Value

Part Number	MJ802G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW7776800
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Frequency	2 MHz
Voltage Rating (DC)	90.0 V
Current Rating	30.0 A
Number of Positions	2 Position
Polarity	NPN
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	90 V
Thermal Resistance	0.875℃/W (RθJC)
Continuous Collector Current	30A
hFE Min	25
Input Power (Max)	200 W
DC Current Gain (hFE)	25
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Material	Silicon
Operating Temperature	-65℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The MJ802G is a 90V Silicon NPN Bipolar High Power Transistor for use as an output device in complementary audio amplifiers to 100W music power per channel.
High DC current gain
Excellent safe operating area
Collector-base voltage (Vcbo = 100V)
Emitter-base voltage (Vcbo = 4V)

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