MJB44H11G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJB44H11G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8824192
Category

BJT Transistor, BJT
Package

TO-263-3
Description

D2PAK NPN 80V 10A
Documentation

Datasheet

MJB44H11G Global Supplier

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MJB44H11G Specifications

Attribute	Attribute Value

Part Number	MJB44H11G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8824192
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Frequency	50 MHz
Voltage Rating (DC)	80.0 V
Current Rating	10.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	50 W
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	10A
hFE Min	40 @4A, 1V
Input Power (Max)	2 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Low collector to emitter saturation voltage (VCE (sat) = 1V maximum at 8A)
Fast switching speeds
Complementary pairs simplifies designs
ESD rating - 3B > 8000V human body model, C > 400V machine model
5V Emitter to base voltage (VEBO)
2.5°C/W Thermal resistance, junction to case
7.5°C/W Thermal resistance, junction to ambient

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