MJD117G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD117G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW12989437
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK PNP 100V 2A
Documentation

Datasheet

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MJD117G Specifications

Attribute	Attribute Value

Part Number	MJD117G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW12989437
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	-100 V
Current Rating	-2.00 A
Halogen Free Status	Halogen Free
Output Voltage	100 V
Output Current	2 A
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	1.75 W
Breakdown Voltage (Collector to Emitter)	100 V
Thermal Resistance	71.4℃/W (RθJA)
Continuous Collector Current	2A
hFE Min	1000 @2A, 3V
hFE Max	12000
Input Power (Max)	1.75 W
DC Current Gain (hFE)	12
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Gain Bandwidth	25MHz (Min)
Power Dissipation (Max)	1750 mW
Input Voltage	5 V
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**PNP Darlington Transistors, ON Semiconductor**
These Darlington transistors by ON Semiconductor are a compound structure consisting of two bipolar transistors, either integrated or separated devices. These devices are connected so the current amplified by the first transistor is further amplified by the second device.

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