MJD117T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD117T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW17691763
Category

BJT Transistor, BJT
Package

TO-252-3
Description

Trans Darlington PNP 100V 2A 20000mW 3Pin(2+Tab) TO-252 T/R
Documentation

Datasheet

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MJD117T4 Specifications

Attribute	Attribute Value

Part Number	MJD117T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW17691763
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	-100 V
Current Rating	-2.00 A
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	20 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	1000 @2A, 3V
Input Power (Max)	20 W
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Gain Bandwidth	25MHz (Min)
Power Dissipation (Max)	20000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJD117T4 is a PNP complementary power Darlington Transistor manufactured using Planar technology with "Base Island" layout. It has monolithic Darlington configuration with integrated anti-parallel collector-emitter diode.
Good hFE linearity
High fT frequency

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