MJD122T4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD122T4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1200789
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 100V 8A
Documentation

Datasheet

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MJD122T4G Specifications

Attribute	Attribute Value

Part Number	MJD122T4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1200789
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	8.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	20 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	8A
hFE Min	1000 @4A, 4V
hFE Max	12000
Input Power (Max)	1.75 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	1750 mW
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series.
Lead formed for surface-mount applications in plastic sleeves
Monolithic construction with built-in base-emitter shunt resistors
Complementary pairs simplifies designs
AEC-Q101 qualified and PPAP capable

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