MJD127T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD127T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1738173
Category

BJT Transistor, BJT
Package

TO-252-3
Description

Trans Darlington PNP 100V 8A 20000mW 3Pin(2+Tab) TO-252 T/R
Documentation

Datasheet

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MJD127T4 Specifications

Attribute	Attribute Value

Part Number	MJD127T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1738173
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	-100 V
Current Rating	-5.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	20 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	1000 @4A, 4V
Input Power (Max)	20 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	20000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJD127T4 is a PNP complementary power Darlington Transistor manufactured using Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Low collector-emitter saturation voltage
Integrated anti-parallel collector-emitter diode

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