MJD200T4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD200T4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW16845660
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 25V 5A
Documentation

Datasheet

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MJD200T4G Specifications

Attribute	Attribute Value

Part Number	MJD200T4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW16845660
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	65 MHz
Voltage Rating (DC)	25.0 V
Current Rating	5.00 A
Power Rating	1.4 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	12.5 W
Breakdown Voltage (Collector to Emitter)	25 V
Continuous Collector Current	5A
hFE Min	45 @2A, 1V
Input Power (Max)	1.4 W
DC Current Gain (hFE)	70
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1400 mW
	expand all
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS
MJD200 (NPN)
MJD210 (PNP)
NPN/PNP Silicon DPAK For Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier applications.
Features
•Collector−Emitter Sustaining Voltage − VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc
•High DC Current Gain − hFE = 70 (Min) @ IC= 500 mAdc
= 45 (Min) @ IC= 2 Adc
= 10 (Min) @ IC= 5 Adc
•Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
•Low Collector−Emitter Saturation Voltage −VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdc
= 0.75 Vdc (Max) @ IC= 2.0 Adc
•High Current−Gain − Bandwidth Product −fT= 65 MHz (Min) @ IC= 100 mAdc
•Annular Construction for Low Leakage −ICBO= 100 nAdc @ Rated VCB
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V
•Pb−Free Packages are Available

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