MJD3055T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD3055T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW12017714
Category

BJT Transistor, BJT
Package

TO-252-3
Description

Trans GP BJT NPN 60V 10A 20000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

MJD3055T4 Global Supplier

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MJD3055T4 Specifications

Attribute	Attribute Value

Part Number	MJD3055T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW12017714
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	2 MHz
Voltage Rating (DC)	60.0 V
Current Rating	10.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	20 W
Gain Bandwidth Product	2 MHz
Breakdown Voltage (Collector to Base)	70.0 V
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	20 @4A, 4V
hFE Max	100
Input Power (Max)	20 W
DC Current Gain (hFE)	5
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	20000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

If you require a general purpose BJT that can handle high voltages, then the NPN MJD3055T4 BJT, developed by STMicroelectronics, is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 20000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

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