MJD3055T4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD3055T4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4003139
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 60V 10A
Documentation

Datasheet

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MJD3055T4G Specifications

Attribute	Attribute Value

Part Number	MJD3055T4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4003139
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-252-3
Frequency	2 MHz
Voltage Rating (DC)	60.0 V
Current Rating	10.0 A
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	1.75 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	10A
hFE Min	20 @4A, 4V
Input Power (Max)	1.75 W
DC Current Gain (hFE)	5
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1750 mW
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**NPN Power Transistors, ON Semiconductor**
These ON Semiconductor transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

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