MJD31CT4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD31CT4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW17735132
Category

BJT Transistor, BJT
Package

TO-252-3
Description

Trans GP BJT NPN 100V 3A 15000mW 3Pin(2+Tab) TO-252 T/R
Documentation

Datasheet

MJD31CT4 Global Supplier

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MJD31CT4 Specifications

Attribute	Attribute Value

Part Number	MJD31CT4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW17735132
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	3.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	15 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	10 @3A, 4V
Input Power (Max)	15 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	15000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJD31CT4 is a NPN low voltage Power Transistor manufactured using Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Surface-mount power package
PNP complementary to the type is MJD32C

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